Element Six joins SEMICON Japan to discuss synthetic diamonds role in semiconductor thermal management
Synthetic Diamond Market Leader to Offer Insight on Thermal Management Challenges, Solutions and 2015 Forecast
SANTA CLARA, Calif. (Nov. 25, 2014)—Element Six, the world leader in synthetic diamond supermaterials and member of the De Beers Group of Companies, today announced that Mr. Mitsuharu Yoshizawa will speak at SEMICON Japan 2014 on the topic of synthetic diamond’s role in semiconductor thermal management. Element Six’s presentation will discuss challenges associated with thermal management for semiconductors, advantages of GaN-on-Diamond substrates in power density and thermal barrier resistance as well as the future of GaN-on-Diamond wafer manufacturing.
Date and Time: Wednesday, Dec. 3, 2014, from 1:30 p.m. –2:20 p.m. JST
Location: East Hall 4, Tokyo Big Sight
“Engineers have struggled for years to surpass thermal barriers that hinder device performance including power density and reliability. At this year’s SEMICON Japan, we’re eager to discuss viable thermal management solutions that have emerged through synthetic diamond advancements,” said Director of Element Six Technologies, Adrian Wilson. “In addition to being first to offer GaN-on-Diamond wafers, we have now expanded our diamond portfolio with an additional thermal grade material, all of which are designed to satisfy the ITRS roadmap requirements while cost-effectively meeting the needs of device manufacturers.”
Most recently introducing DIAFILM TM130—a new thermal grade of diamond grown by chemical vapor deposition (CVD)—Element Six expanded its already extensive portfolio to offer an additional option to address customers’ unique cost-performance thermal management needs. Offering full isotropic heat spreading in both planar and through plane directions, DIAFILM TM130 has a thermal conductivity in excess of 1300 W/mK. Element Six now provides a total of five material grades spanning five levels of performance ranging from 1000 W/mK to 2000 W/mK.
Earlier this year, Element Six GaN-on-Diamond wafers were proven by Raytheon Company to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices. Using a number of industry standard thermal measurement techniques to establish consistency, it was found that Raytheon achieved a three times improvement in GaN-on-Diamond’s RF areal power density in high electron mobility transistor (HEMT) devices, compared to GaN-on-SiC devices. Element Six GaN-on-Diamond also demonstrated greater than a 40 percent reduction in thermal resistance by bringing diamond, which is four times more thermally conductive than silicon carbide, within a micron of the GaN epitaxy.
If interested in learning more about Element Six’s advanced thermal management materials or its GaN-on-Diamond wafers, please visit www.e6.com or stop-by the company’s booth (#1368) at SEMICON Japan.Return to news archive